For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN) Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, 130 ☌ Junction temperature Storage.īSH202 : BSH202 P-channel Enhancement Mode MOS Transistor Package: SOT23 (SST3). ![]() NTE74HC14 : NTE Replacement Semiconductors HEX SCHMITT INVERTER Specifications: Manufacturer: NTE RoHS: Details Factory Pack Quantity: 1ĢSD1885 : NPN Triple Diffused Planar Silicon Transistor, Color TV Horizontal Deflection Output Application.ĢSD1906 : NPN Epitaxial Planar Silicon Transistor, High-current Switching Application.īC808-25W : PNP Silicon af Transistor. ![]() of Teeth: - Knob Diameter: - Flange Diameter: - Shaft Type: - Knob Material: - Torque: - Bore Size: - Module Number:. NTE7164 : Double−balanced Mixer & Oscillatorĥ4-303PC : SWITCH, TOGGLE, SPDT, 6A, 250VĠ4-1412030 : CABLE TIE 15IN HS BLACK Specifications: Knob / Dial Style: - Gear Material: - Shaft Diameter: - No. ![]() NTE2084 : Integrated Circuit 5−stage Darlington Transistor Array NEV3300M63 : Aluminum Electrolytic 6.3V to 100V VR = 5.50V Max Reverse Stand Off Voltage. NTE4933 : Surge Clamping, Transient Overvoltage Suppressor, Bidirectional. NTE451 : Silicon N-cannel JFET Transistor. NTE3051 : NTE3051, 0.27" Polarity And Overflow Numeric Display, Common Anode NTE1380 : NTE1380, Integrated Circuit Audio Power Amplifier, 14W NTE3323 NTE3323, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE3322 NTE3322, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE3321 NTE3321, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE3320 NTE3320, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE332 Silicon Complementary Transistors Audio Power Amp, Switch NTE331MP Silicon Complementary NPN Transistor. NTE3312 NTE3312, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, N-channel Enhancement Mode, High Speed Switch. NTE3311 Insulated Gate Bipolar Transistor. NTE3310 NTE3310, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE331 Silicon Complementary Transistors Audio Power Amp, Switch NTE331 Silicon Complementary NPN Transistor. NTE3303 NTE3303, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, ![]() NTE3302 NTE3302, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE3301 NTE3301, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE3300 NTE3300, Insulated Gate Bipolar Transistor N Channel Enhancement Mode, NTE326 Silicon P-channel JFET Transistor. Some Part number from the same manufacture NTE Electronics, Inc. Parameter Functional Test CommonEmitter Amplifier Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Imnpedance GPE Zin Zout VCC = 13.6V, POUT = 50W, IC(max) = 30MHz VCC = 13.6V, POUT dB % Symbol Test Conditions Min Typ Max Unit Parameter OFF Characteristics CollectorEmitter Breakdown Voltage V(BR)CEO = 0 V(BR)CES = 20mA, VBE = 0 CollectorBase Breakdown Voltage EmitterBase Breakdown Voltage ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob VCB 200 pF hFE = 1A, VCE 10 V(BR)CBO = 0 V(BR)EBO 10mA, IC Symbol Test Conditions Min Typ Max UnitĮlectrical Characteristics (Cont'd): (TC = +25☌ unless otherwise specified) 1.53☌/W Electrical Characteristics: (TC = +25☌ unless otherwise specified) to +150☌ Thermal Resistance, Junction to Case, RJC. 7.5A Total Device Dissipation (TC = +25☌), PD. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, VCEO. Description: The is a silicon NPN RF power transistor a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz.
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